发明名称 |
Electron emission lithography apparatus and method using a selectively grown carbon nanotube |
摘要 |
An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.
|
申请公布号 |
US6794666(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20020160102 |
申请日期 |
2002.06.04 |
申请人 |
SAMSUGN ELECTRONICS CO., LTD. |
发明人 |
CHOI WON-BONG;YOO IN-KYEONG |
分类号 |
C01B31/02;G03F7/20;H01J3/02;H01J9/02;H01J37/305;H01L21/027;(IPC1-7):G21G5/00;G21K5/10 |
主分类号 |
C01B31/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|