发明名称 Electron emission lithography apparatus and method using a selectively grown carbon nanotube
摘要 An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.
申请公布号 US6794666(B2) 申请公布日期 2004.09.21
申请号 US20020160102 申请日期 2002.06.04
申请人 SAMSUGN ELECTRONICS CO., LTD. 发明人 CHOI WON-BONG;YOO IN-KYEONG
分类号 C01B31/02;G03F7/20;H01J3/02;H01J9/02;H01J37/305;H01L21/027;(IPC1-7):G21G5/00;G21K5/10 主分类号 C01B31/02
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