| 摘要 |
A method of reading and restoring data stored in a ferroelectric memory cell is disclosed. The cell includes a first transistor and first ferroelectric capacitor connected, in series with each other, between a first bitline and an auxiliary line, a second transistor and second ferroelectric capacitor connected, in series with each other, between a second bitline and the auxiliary line, the first and second transistors having respective control terminals connected to a common wordline. The reading method includes precharging the first and second capacitors, applying a read pulse to the cell such that the state of the first capacitor is changed, reading the cell by a sensing means, and restoring the first capacitor to an initial state. Advantageously, the reading method further includes changing the state of the second capacitor during the step of restoring the first capacitor, and further restoring the second capacitor to an initial state, such that the voltages being applied to the transistors during any of the steps are lower than a voltage reference of the cell. Also disclosed is a method of writing and restoring data stored in a ferroelectric memory cell.
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