发明名称 Memory integrated circuit
摘要 An improved memory IC whose memory cells are configured in a chain architecture is disclosed. The first diffusion regions of the cell transistors of the chain are coupled to first capacitor electrodes while the second diffusion regions are coupled to second capacitor electrodes. This ensures that the electric field applied across any of the capacitors of the chain by a plateline pulse is in the same direction. This reduces or avoids asymmetrical hysteresis curves for adjacent memory cells, thereby the improving sensing window.
申请公布号 US6795329(B2) 申请公布日期 2004.09.21
申请号 US20020177324 申请日期 2002.06.20
申请人 INFINEON TECHNOLOGIES AKTIENGESELLSCHAFT 发明人 JACOB MICHAEL
分类号 G11C11/22;H01L21/8246;H01L27/105;(IPC1-7):G11C11/00 主分类号 G11C11/22
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