发明名称 Semiconductor integrated circuit device with internal potential generating circuit allowing external tuning of internal power supply potential
摘要 A semiconductor integrated circuit device includes a plurality of internal circuits, internal potential generating circuits for converting a level of an external power supply potential to supply an internal potential at a level corresponding to a level set signal, a control portion for successively applying the plurality of level set signals to each of the internal potential generating circuits, and a measuring circuit for comparing each internal potential with a reference potential, and holding information representing results of the comparison. During a test period, a comparing circuit in the internal potential generating circuit compares a level corresponding to the level set signal with a comparison reference potential.
申请公布号 US6795355(B2) 申请公布日期 2004.09.21
申请号 US20020200257 申请日期 2002.07.23
申请人 RENESAS TECHNOLOGY CORP. 发明人 OOISHI TSUKASA
分类号 G11C11/14;G11C5/14;G11C11/15;G11C11/413;G11C29/04;G11C29/12;(IPC1-7):G11C7/00 主分类号 G11C11/14
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