发明名称 |
METHOD OF PLATING BACK SURFACE OF WAFER FOR INCREASING PRODUCTIVITY BY PROCESSING CLEARLY DICING FACE THEREOF |
摘要 |
PURPOSE: A method of plating a back surface of a wafer is provided to process clearly a dicing face of the wafer by performing a partial plating process on the remaining part except for a cut part of the wafer. CONSTITUTION: A thin metal layer(13) is formed on a back surface of a wafer(11). A photoresist layer pattern is formed on the thin metal layer. A plating process for the back surface of the wafer is performed. The photoresist layer is removed therefrom and the thin metal layer is removed by an etching process. An adhesive tape(16) is adhered on the gold(15) plated on the back surface of the wafer. The wafer is cut along a dicing face. The photoresist layer pattern is formed only on a wafer dicing part.
|
申请公布号 |
KR100451151(B1) |
申请公布日期 |
2004.09.21 |
申请号 |
KR19970070085 |
申请日期 |
1997.12.17 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
LIM, TAE YUN |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|