| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to eliminate a leakage current of a contact by using a silicide layer and by removing a field cutting phenomenon without reducing contact resistance. CONSTITUTION: A field oxide layer(23), a gate oxide layer(22) and the first conductive layer(24) are sequentially formed on a silicon substrate(21). An etch process is performed to expose a part of the field oxide layer and a part of the silicon substrate in a region adjacent to the field oxide layer. An ion implantation process is performed on the exposed silicon substrate to form the first junction part. A silicide layer(26) is formed on the resultant structure. The silicide layer, the first conductive layer and the gate oxide layer are etched to form a gate electrode and a source/drain, wherein a part of the silicide layer overlaps a part of the first junction part to prevent the field oxide layer in a region adjacent to the silicon substrate from being exposed. An oxide layer(27) is deposited on the resultant structure and is partially etched to form butting contact hole. The second conductive layer(28) is deposited on the resultant structure.
|
