| 摘要 |
A method for making high density interconnected modules for radio-frequency, digital processing, or other circuits subject to radiated interference includes the step of applying sets of semiconductor chips to individual regions on an insulating flexible substrate. Electrically conductive, planar walls are procured, each having first and second broad surfaces and a through aperture. The through aperture is dimensioned to fit over at least some of the chips of a module. The aperture is registered with the chips to be surrounded, and the wall is placed over the chips. Liquid encapsulant is applied to fill the resulting cavity, thereby encapsulating the chips. HDI interconnections are made, and the modules are separated. The conductive walls define the module dimensions.
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