发明名称 |
Organic thin-film semiconductor element and manufacturing method for the same |
摘要 |
There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.
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申请公布号 |
US6794220(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20020230791 |
申请日期 |
2002.08.29 |
申请人 |
KONICA CORPORATION |
发明人 |
HIRAI KATSURA;FUNAYAMA SATOSHI;EGUCHI TOSHIYA;YAMAMOTO NAOTO |
分类号 |
C23C16/509;C23C16/54;H01L21/316;H01L27/32;H01L51/00;H01L51/05;H01L51/10;H01L51/30;H01L51/40;(IPC1-7):H01L51/40 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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