发明名称 |
High performance PNP bipolar device fully compatible with CMOS process |
摘要 |
A pnp bipolar junction transistor is formed with improved emitter efficiency by reducing the depth of the p well implant to increase carrier concentration in the emitter and making the emitter junction deeper to increase minority lifetime in the emitter. The high gain BJT is formed without added mask steps to the process flow. A blanket high energy boron implant is used to suppress the isolation leakage in SRAM in the preferred embodiment.
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申请公布号 |
US6794730(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20010028002 |
申请日期 |
2001.12.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KIM YOUNGMIN;TANG SHAOPING;SRIDHAR SEETHARAMAN;CHATTERJEE AMITAVA |
分类号 |
H01L21/331;H01L21/8249;H01L29/08;(IPC1-7):H01L27/082;H01L27/102;H01L29/70 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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