| 摘要 |
A radiation hardening circuit that includes two series-connected transistors that can replace any single transistor in a circuit. The hardening circuit includes a resistor that has a first node and a second node, a first transistor having a source terminal, a gate terminal, a drain terminal, and a body terminal. The first node of the resistor may be conductively connected to the drain terminal of the first transistor and the second node of the resistor is conductively connected to the body terminal of the first transistor. The hardening circuit also includes a second transistor in series with the first transistor, driven so that both transistors are off or on at any given time. The circuit is resistant to radiation-induced events due to the body bias of the first transistor, the off state of the second transistor, and the current limiting effect of the resistor.
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