发明名称 |
Field emission electron source, method of producing the same, and use of the same |
摘要 |
An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.
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申请公布号 |
US6794805(B1) |
申请公布日期 |
2004.09.21 |
申请号 |
US19990382956 |
申请日期 |
1999.08.25 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
HATAI TAKASHI;KOMODA TAKUYA;HONDA YOSHIAKI;AIZAWA KOICHI;WATABE YOSHIFUMI;ICHIHARA TSUTOMU;KONDO YUKIHIRO;OKA NAOMASA;KOSHIDA NOBUYOSHI |
分类号 |
H01J1/312;H01J9/02;H01J31/12;(IPC1-7):H01J1/30;H01J29/04 |
主分类号 |
H01J1/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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