发明名称 ESD protection device for high performance IC
摘要 The present invention includes a circuit structure for ESD protection and methods of making the circuit structure. The circuit structure can be used in an ESD protection circuitry to protect certain devices in an integrated circuit, and can be fabricated without extra processing steps in addition to the processing steps for fabricating the ESD protected devices in the integrated circuit.
申请公布号 US6794715(B1) 申请公布日期 2004.09.21
申请号 US20020189919 申请日期 2002.07.03
申请人 ALTERA CORPORATION 发明人 LIU YOWJUANG;HUANG CHENG
分类号 H01L27/02;H01L29/51;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L27/02
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