发明名称 |
Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls |
摘要 |
A DRAM cell capacitor is described. Capacitor formation and cell isolation methods are integrated by using existing isolation trench sidewalls to form DRAM capacitors. A doped silicon substrate adjacent to the vertical sidewalls of the isolation trench provides one DRAM cell capacitor plate. The DRAM capacitor also contains a dielectric material that partially covers the interior vertical sidewalls of the isolation trench. A conductive layer covering the dielectric material on the vertical sidewalls of the isolation trench forms the second capacitor plate and completes the DRAM capacitor.
|
申请公布号 |
US6794698(B1) |
申请公布日期 |
2004.09.21 |
申请号 |
US20000549265 |
申请日期 |
2000.04.14 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
PERNG DUNG-CHING;LIU YAUH-CHING |
分类号 |
H01L21/02;H01L21/334;H01L21/762;H01L21/8242;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|