发明名称 Non-volatile multi-threshold CMOS latch with leakage control
摘要 An integrated circuit including a Multi-Threshold CMOS (MTCMOS) latch combining low voltage threshold CMOS circuits with high voltage threshold CMOS circuits. The low voltage threshold circuits including a majority of the circuits in the signal path of the latch to ensure high performance of the latch. The latch further including high voltage threshold circuits to eliminate leakage paths from the low voltage threshold circuits when the latch is in a sleep mode. A single-phase latch and a two-phase latch are provided. Each of the latches is implemented with master and slave registers. Data is held in either the master register or the slave register depending on the phase or phases of the clock signals. A multiplexer may alternatively be implemented prior to the master latch for controlling an input signal path during sleep and active modes of the latch and for providing a second input signal path for test.
申请公布号 US6794914(B2) 申请公布日期 2004.09.21
申请号 US20020155378 申请日期 2002.05.24
申请人 QUALCOMM INCORPORATED 发明人 SANI MEHDI HAMIDI;UVIEGHARA GREGORY A.
分类号 H03K3/3562;H01L27/092;H03K3/00;H03K3/037;H03K3/356;(IPC1-7):H03K3/289 主分类号 H03K3/3562
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