发明名称 Light emitting diode and method of fabricating thereof
摘要 The light emitting diode includes an intermediate layer made of non-single crystalline material between single crystalline layers. By the intermediate layer, the boundary characteristic between the single crystalline layers may be improved and the defect caused by the lattice mismatch can be decreased, so that the brightness and forward voltage characteristics can be improved.
申请公布号 US6794211(B2) 申请公布日期 2004.09.21
申请号 US20020101800 申请日期 2002.03.20
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 OH MYEONG SEOK;LIM SUNG WOOK;AHN JEONG HWAN
分类号 H01L33/10;H01L33/12;H01L33/14;H01L33/16;H01L33/30;(IPC1-7):H01L21/00 主分类号 H01L33/10
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