发明名称 |
Light emitting diode and method of fabricating thereof |
摘要 |
The light emitting diode includes an intermediate layer made of non-single crystalline material between single crystalline layers. By the intermediate layer, the boundary characteristic between the single crystalline layers may be improved and the defect caused by the lattice mismatch can be decreased, so that the brightness and forward voltage characteristics can be improved.
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申请公布号 |
US6794211(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20020101800 |
申请日期 |
2002.03.20 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
OH MYEONG SEOK;LIM SUNG WOOK;AHN JEONG HWAN |
分类号 |
H01L33/10;H01L33/12;H01L33/14;H01L33/16;H01L33/30;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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