| 摘要 |
Various methods of controlling conformal film deposition processes, and a system for accomplishing same are disclosed. In one embodiment, the method comprises forming a plurality of features above a semiconducting substrate, determining at least one of a critical dimension and a cross-sectional profile of at least one of the plurality of features, determining a thickness for a layer of material to be conformally deposited around the plurality of features based upon at least one of the determined critical dimension and cross-sectional profile and depositing the layer of material around the plurality of features to the determined thickness. In some embodiments, the method further comprises conformally depositing a first layer of material above a plurality of features formed above a semiconducting substrate, measuring a thickness of the first layer of material, determining a thickness of a second layer of material to be conformally deposited around a plurality of features formed above a subsequently processed substrate based upon the measured thickness of the first layer, and conformally depositing the second layer of material to the determined thickness around the plurality of features on the subsequently processed substrate.
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