Semiconductor memory device storing ternary data signal

摘要

A memory cell in the SRAM has three storing/holding states, i.e., a state where two storage nodes store 0, 1, a state where the two storage nodes store 1, 0, and a state where the two storage nodes store 1, 1. Therefore, the number of memory cells can be reduced by one half compared to the conventional case in which two memory cells were required to store three types of data signals.