发明名称 |
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication |
摘要 |
A semiconductor structure that includes at least one circuit element of a fuse, a diffusion barrier or a capacitor that is formed by refractory metal-silicon-nitrogen is disclosed. A method for fabricating such semiconductor structure that includes a fuse element, a diffusion barrier, a resistor or a capacitor by a refractory metal-silicon-nitrogen material is further disclosed. A suitable refractory metal-silicon-nitrogen material to be used is TaSiN which provides a wide range of resistivity by changing the ratio of Ta:Si:N. The invention provides the benefit that the various components of diffusion barriers, fuses, capacitors and resistors may be formed by a single deposition process of a TaSiN layer, the various components are then selectively masked and treated by either heat-treating or ion-implantation to vary their resistivity selectively while keeping the other shielded elements at the same resistivity.
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申请公布号 |
US6794226(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20030374395 |
申请日期 |
2003.02.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, JR. CYRIL;CLEVENGER LAWRENCE;HSU LOUIS LU-CHEN;WONG KEITH KWONG HON |
分类号 |
H01L21/02;H01L21/768;H01L23/525;H01L27/06;(IPC1-7):H01L21/82;H01L21/823;H01L21/20;H01L21/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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