发明名称 |
Dual metal gate transistors for CMOS process |
摘要 |
A process for forming a first transistor of a first conductivity type and a second transistor of a second conductivity type in a semiconductor substrate is disclosed. The substrate has a first well of the first conductivity type and a second well of the second conductivity type. A gate dielectric is formed over the wells. A first metal layer is then formed over the gate dielectric. A portion of the first metal layer located over the second well is then removed. A second metal layer different from said first metal is then formed over the wells and a gate mask is formed over the second metal. The metal layers are then patterned to leave a first gate over the first well and a second gate over the second well. Source/drains are then formed in the first and second wells to form the first and second transistor.
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申请公布号 |
US6794281(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20020238314 |
申请日期 |
2002.09.10 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MADHUKAR SUCHARITA;NGUYEN BICH-YEN |
分类号 |
H01L21/336;H01L21/8238;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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