METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO IMPROVE SAC(SELF-ALIGNED CONTACT) ETCH MARGIN

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to restrain stress and to improve SAC(Self-Aligned Contact) etch margin by remaining a buffer oxide layer on a silicon substrate. CONSTITUTION: Word lines(33) having a hard mask pattern(35) are formed on a silicon substrate(31). A buffer oxide layer(37a) and a nitride layer(39a) are sequentially formed on the resultant structure. An interlayer dielectric is formed on the resultant structure. The interlayer dielectric is partially removed to expose the nitride layer. The exposed nitride layer is removed. The exposed buffer oxide layer and the interlayer dielectric are then removed.