METHOD FOR MANUFACTURING CMOS IMAGE SENSOR TO IMPROVE PROPERTIES OF NATIVE NMOS TRANSISTOR

摘要

PURPOSE: A method for manufacturing a CMOS image sensor is provided to improve properties of a native NMOS transistor and to reduce manufacturing cost by simplifying processes of a photodiode. CONSTITUTION: A semiconductor substrate(30) defined with a photodiode region and a native NMOS transistor region is prepared. A pad oxide pattern and a hard mask are formed on the substrate. A trench is then formed. A P-type impurity region(35) used as a P0 impurity region(41) of the photodiode and an N channel stop region of the native NMOS transistor is formed by implanting p-type dopants to penetrate the hard mask. The thickness of the hard mask is 1450-1900Å and the N channel stop ion-implantation is performed under energy of 30 KeV and more.