HIGH-VOLTAGE DEVICE FORMING TWO-TYPE TRANSISTOR WITH DIFFERENT CHANNEL LENGTH IN SINGLE DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A high-voltage device and a method for manufacturing the same are provided to improve efficiency and reliability of the device by forming two-type transistor with different channel length in a single device. CONSTITUTION: Trenches are formed in long and short channel regions of a substrate(200). An oxide layer is deposited on the resultant structure. A spacer is formed at inner walls of the trench of the long channel region and an n-type epitaxial layer of the long channel region is over-etched. Channel ion-implantation and annealing are sequentially carried out. A gate oxide layer(207) and a gate electrode(208) are formed in the trenches. A source region(209) is then formed on the gate electrode.