PASSIVATION LAYER OF SEMICONDUCTOR DEVICE FOR PREVENTING DETERIORATION BY INSERTING METAL BUFFER LAYER BETWEEN OXIDE LAYER AND NITRIDE LAYER AND FORMING METHOD THEREOF

摘要

PURPOSE: A passivation layer of a semiconductor device and a forming method thereof are provided to prevent deterioration of a ferroelectric memory capacitor under a metal buffer layer by inserting the metal buffer layer between a lower insulating passivation layer and an upper insulating passivation layer. CONSTITUTION: A lower structure(102) including a transistor and a metal line is formed on an upper surface of a semiconductor substrate(100). A lower insulating passivation layer(104) is formed on the lower structure. A metal buffer layer(106) is formed on the lower insulating layer. An upper passivation layer(108) is formed on the metal buffer layer. The lower structure is formed with a FRAM. The lower insulating passivation layer is formed with a PE-TEOS layer or a PE-oxide layer.