发明名称 EMITTER-CONTROLLED TRANSISTOR SWITCH
摘要 FIELD: electrical engineering; converters and secondary power supplies. ^ SUBSTANCE: proposed transistor switch has series-connected high-voltage bipolar transistors 1 and low-voltage field-effect transistor 2 whose gate is connected to lead intended for connecting control pulse source. Connected between base of high-voltage bipolar transistor 1 and low-voltage field-effect transistor 2 is parallel circuit set up of first voltage regulator diode 3, capacitor 7, and second voltage regulator diode 5 connected in series with starting lead of secondary-winding 6.2 of current transformer whose primary winding 6.1 is inserted in collector circuit of high-voltage bipolar transistor 1 and its starting lead is connected to power supply. Resistor is inserted between base of high-voltage bipolar transistor 1 and control voltage source. ^ EFFECT: reduced power of dc control voltage source, enhanced capacity, simplified design. ^ 1 cl, 1 dwg
申请公布号 RU2236745(C1) 申请公布日期 2004.09.20
申请号 RU20030105583 申请日期 2003.02.26
申请人 发明人 GUMANOVSKIJ B.JA.
分类号 H02M7/537;H02M7/538;H03K17/60 主分类号 H02M7/537
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