SEMICONDUCTOR DEVICE CAPABLE OF BEING MINIATURIZED ON SURFACE IN PARALLEL WITH MAIN SURFACE OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A semiconductor device is provided to miniaturize a semiconductor device on a surface in parallel with a main surface of the semiconductor substrate. CONSTITUTION: A device isolation part, when it is seen from a vertical direction with respect to a main surface of a semiconductor substrate(1), surrounds a device region and electrically isolates one device region from another device region. A plurality of devices are installed in the device region, including the first and second FET(field effect transistor) transistors that function as a high side switch of a latch circuit. The semiconductor device is used while a portion under either one of the first or second FET transistor is completely depleted. The first and second FET transistors commonly use a source region and a drain region.