LOW TEMPERATURE PROCESS ON PCMO THIN FILM ON IRIDIUM SUBSTRATE FOR RRAM APPLICATION TO PROGRAM RESISTANCE INCLUDING PCMO THIN FILM TO HAVE HIGH OR LOW RESISTANCE STATE

摘要

PURPOSE: A method for applying a PCMO(Pr0.7Ca0.3MnO3) thin film is provided to program resistance including a PCMO thin film to have a high or low resistance state by using a single pulse with various pulse widths. CONSTITUTION: A substrate is prepared. A barrier layer is deposited on the substrate. An iridium layer is deposited on the barrier layer. A PCMO layer is spin-coated on the iridium layer. The PCMO layer and the substrate are baked according to a three-step baking process. The substrate and the PCMO layer are annealed in an RTP(rapid thermal process) chamber. The spin-coating process, the baking process and the annealing process are reiterated until the PCMO layer becomes a desired thickness. The substrate and the PCMO layer are annealed. An upper electrode is deposited. An RRAM(resistive random access memory) device is completed.