WELL STRUCTURE OF HIGH-VOLTAGE DEVICE TO IMPROVE BREAKDOWN VOLTAGE OF WELL AND PREVENT CHARGE-UP AND LATCH-UP

摘要

PURPOSE: A well structure of a high-voltage device is provided to be capable of improving breakdown voltage of well and preventing charge-up and latch-up. CONSTITUTION: An N-well(22) is formed in a P-type substrate(21). A P-well(23) is formed in the substrate and spaced apart from the N-well. A field stop implant region(24) having same conductive type to the substrate is formed between the N-well and the P-well. A pick-up part(26) having same conductive type to the field stop implant region is formed to overlap the field stop implant region.