METHOD FOR DEPOSITING ALD THIN FILM USING Al2O3, HfO2, AND ZrO2 TO ENHANCE PRODUCTIVITY

摘要

PURPOSE: A method for depositing an ALD thin film is provided to enhance productivity by removing a layer including Al2O3, HfO2, and ZrO2 without opening a reaction chamber. CONSTITUTION: A substrate is loaded on a wafer block(S1). An ALD layer is deposited on an upper surface of the substrate(S2). The substrate including the ALD thin film is unloaded from the wafer block(S3). A dummy substrate is loaded on the wafer block(S4-1). A pre-conditioning process is performed by using an inert gas or a mixed gas of the inert gas and a cleaning gas(S4-2). A stacked layer is removed from a surface of a shower head by activating the cleaning gas(S4-3). The dummy substrate is unloaded from the wafer block(S4-4). A new dummy substrate is loaded on the wafer block and the above processes are performed repeatedly(S4-5). A reaction chamber is purged by using the inert gas(S5).