METHOD FOR FORMING STORAGE NODE OF SEMICONDUCTOR CAPACITOR TO PREVENT BOWING AND BRIDGE BETWEEN ADJACENT STORAGE NODES

摘要

PURPOSE: A method for forming a storage node of a semiconductor capacitor is provided to prevent bowing and bridge between adjacent storage nodes by forming a nitride layer for a spacer before depositing a polysilicon layer for the storage node. CONSTITUTION: An interlayer dielectric(21) is formed on a substrate(20). A poly plug(22) is formed in the interlayer dielectric. A sacrificial oxide layer(24) is formed on the resultant structure to expose the poly plug. A nitride layer as a spacer is formed at both sidewalls of the sacrificial oxide layer. The exposed poly plug is partially removed. Then, a polysilicon layer is formed on the recessed poly plug(22). By using a deep-out mask, the nitride layer and the sacrificial oxide layer are removed.