| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of securing the stability of manufacturing processes and simplifying the processes by using a triple structure layer as an etching mask. CONSTITUTION: An interlayer dielectric having a plurality of storage node contact plugs(17) is formed at the upper portion of a semiconductor substrate. A core insulating layer(19), a lower photoresist layer, a hard mask thin film, and an upper photoresist layer are sequentially formed at the upper portion of the resultant structure. An upper photoresist pattern(26) is formed by selectively etching the upper photoresist layer. A hard mask thin film pattern(24) and a lower photoresist pattern(22) are sequentially formed by selectively etching the resultant structure using the upper photoresist pattern as an etching mask. The core insulating layer is selectively etched by using an etching mask of triple structure. At this time, the etching mask is made of the lower photoresist pattern, the hard mask thin film pattern, and the upper photoresist pattern.
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