| 摘要 |
A method for manufacturing a semiconductor device, and more particularly, to method for manufacturing a semiconductor device is disclosed which comprises a capacitor having a stable platinum (Pt) lower electrode formed using electrochemical deposition (ECD) process wherein an aluminum oxide (Al2O3) layer is formed on the seed conductive layer as an etching barrier film to prevent the seed conductive layer from being damaged during an etching process for patterning a dummy oxide layer.
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