METHOD FOR FORMING FUSE OF SEMICONDUCTOR DEVICE TO PREVENT SIDE-LOBE OF FUSE DUE TO OPTICAL PROXIMITY EFFECT

摘要

PURPOSE: A method for forming a fuse of a semiconductor device is provided to be capable of preventing the side-lobe of the fuse due to OPE(Optical Proximity Effect). CONSTITUTION: A fuse part of rectangle structure is prepared. The first serif(43) of isosceles triangle structure is formed at vertex portion of the rectangle structure. The second serif(45) is formed at inner side of the rectangle structure of the fuse so as to connect end portion of one side of the rectangle structure. The side of the rectangle structure has the thickness of 340-360 §^.