| 摘要 |
PURPOSE: A fingerprint recognition device manufacturing method is provided to secure a feature of a protection film and to prevent an exfoliation from the protection film by enhancing a scanning window so that it can increase a reliability in a fingerprint recognition. CONSTITUTION: Wiring layers, connected to a lower transistor and transistor poles, are formed, and a metal wiring portion(21) is formed. The first TEOS(Tetra Ethyl Ortho Silicate) layer(22) is formed on a surface including the metal wiring portion(21). An HSG(Hemispherical Grain) layer is formed over the first TEOS layer(22) and is flattened, and then the second TEOS layer(24) on the flattened surface. An ESD(Electro Static Discharge) insulation film is formed. The ESD insulation film is made of a flattened layer and a protection film. The flattened layer is formed by making an ESD oxide film(25) with the TEOS or HLD(High Temperature Low Pressure) oxide film, and flattening the ESD oxide film(25) with a CMP(Chemical Mechanical Polishing) process. Then an ESD nitride film(26) as the protection film is formed on the ESD oxide film(25). A trench is formed on the ESD nitride film(26) by etching selectively the ESD nitride film(26) with a regular depth, and a barrier layer(27) is formed on a surface of the trench. An ESD layer(28) as a scanning window is formed on the barrier layer(27) in the trench.
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