METHOD FOR FORMING OXIDE FILM HAVING HIGH DIELECTRIC CONSTANT, CAPACITOR COMPRISING DIELECTRIC FILM FORMED BY THE METHOD AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A method for forming an oxide film having high dielectric constant, a capacitor comprising dielectric film formed by the method and a method for manufacturing the same are provided to reduce the number of ALD apparatuses by using chemical reaction between precursors of aluminum and hafnium. CONSTITUTION: A semiconductor substrate(40) is loaded into an ALD apparatus. A reactant is deposited on an upper surface of the semiconductor substrate. The reactant includes the first reacting element and the second reacting element. The first high dielectric oxide layer(50a) including the first and the second reacting elements is formed on the upper surface of the semiconductor substrate by oxidizing the first and the second reacting elements.