| 摘要 |
PURPOSE: A photoresist polymer, an antireflective layer polymer, a photoresist composition containing the photoresist polymer, an antireflective layer composition containing the antireflective layer polymer, a method for forming a photoresist pattern and a semiconductor device prepared by the method are provided, to obtain a polymer having a high absorptivity to the light of 248 nm KrF and a relative high etching rate for preventing the damage and collapse of a photoresist pattern. CONSTITUTION: The photoresist polymer is represented by the formula 2 and has a weight average molecular weight of 5,000-10,000, wherein Ra, Rb and Rc are independently H or CH3; R3 is a substituted or unsubstituted linear or branched alkyl group of C1-C6; R4 is H, a substituted or unsubstituted linear or branched alkyl group of C1-C6, a carbonyl group, an alkoxycarbonyl group of C1-C4 or an alkoxyalkyl group of C1-C4; and x', y' and z' are 0.01-0.99. The antireflective layer polymer is represented by the formula 3 or 4 and has a weight average molecular weight of 1,000-10,000,000, wherein Ra', Rb' and Rc' are independently H or CH3; R0 is a substituted or unsubstituted linear or branched alkyl group of C1-C5, or an anthracyl, 9-anthracenealkyl or 9-anthracenenitrile group unsubstituted or substituted with OH, an alkoxyalkyl, an alkoxycarbonyl, a hydroxyalkyl or a carboxyl group; R1 is H, a substituted or unsubstituted linear or branched alkyl group of C1-C5, a hydroxyalkyl or a glycidyl group; and x', y' and z' are 0.01-0.99.
|
