发明名称 ELECTRIC CONTACT USED FOR PHOTOELECTRON SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an enhanced electric contact in a high reflection factor, excellent ohmic contact to a semiconductor, each other's excellent adhesion between layers which form excellent adhesion and contact on the semiconductor, good thermal stability, high stability to the environmental-impact factor, and soldering possibility and structuring possibility. <P>SOLUTION: This electric contact of the photoelectron semiconductor chip 1 comprises a mirror layer 2 made of metal or metal alloy, a protective layer 3 for reducing the corrosion of the mirror layer 2, a barrier layer 4, an adhesion intermediate layer 5, and a solder layer 8. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004260178(A) 申请公布日期 2004.09.16
申请号 JP20040046959 申请日期 2004.02.23
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 STEIN WILHELM;FEHRER MICHAEL;BAUR JOHANNES;WINTER MATTHIAS;PLOESSL ANDREAS;KAISER STEPHAN;HAHN BERTHOLD;EBERHARD FRANZ
分类号 H01L33/32;H01L33/40 主分类号 H01L33/32
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