| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of measuring connection accuracy between exposure patterns by which the connection accuracy between exposure patterns complementarily connected to each other can be measured highly reliably without forming any pattern etc., for measurement, and to provide a method of controlling mask position of exposure system using the method. <P>SOLUTION: After photosensitive layers are exposed to light in an overlapping state by using first and second masks, an exposure pattern in which first and second complementarily connected patterns 4A and 4B are complementarily connected to each other is formed by developing the photosensitive layers. (a) When the patterns 4A and 4B are connected to each other at the optimum connecting position, the connection 5 between the patterns 4A and 4B becomes a linear shape and, (b) when a positional deviation exists in the X-axis direction, the connection 5 becomes a curved shape. (c) When the positional deviation becomes larger, the connection 5 is not formed. The form variation of the edge 6 of the exposure pattern in the vicinity of the connection 5 is quantified by performing line edge roughness mode measurement by means of a length measuring SEM. Then the relative positions between the first masks or/and second masks placed on the exposure system are corrected by feeding back the deviation of the connecting position found by the LER measurement. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
