| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated-gate field-effect transistor having a high breakdown voltage in a state that a surge voltage is applied on a gate electrode. SOLUTION: The insulated-gate field-effect transistor comprises the gate electrode 3g formed on a gate oxide film 2g and comprises gate electrode wiring 3f formed on a field oxide film 2f. In a pull-in section Gh, i.e. a connecting portion between the gate electrode 3g and the gate electrode wiring 3f sandwiching a boundary B-B between the gate oxide film 2g and the field oxide film 2f, resistance Rf at the side of the gate electrode wiring 3f is set higher than resistance Rg at the side of the gate electrode 3g. COPYRIGHT: (C)2004,JPO&NCIPI |
