发明名称 APPARATUS AND METHOD FOR THIN-LAYER METROLOGY
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for thin-layer metrology of semiconductor substrates that performs both a macrometrology (inspection) and a micrometrology (inspection) with only a single apparatus. SOLUTION: The apparatus for thin-layer metrology has at least one cassette element for the semiconductor substrates, a first measurement unit for thin-layer micrometrology, and a transport mechanism provided between the cassette element for the semiconductor substrates and the measurement unit for thin-layer micrometrology. A measurement unit (9) for thin-layer macrometrology is positioned in the region of the transport mechanism (7), after the cassette element (3) and in front of the first measurement unit for thin-layer micrometrology (5). COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004258035(A) 申请公布日期 2004.09.16
申请号 JP20040049159 申请日期 2004.02.25
申请人 LEICA MICROSYSTEMS JENA GMBH 发明人 SLODOWSKI MATTHIAS
分类号 G01N21/956;H01L21/00;H01L21/66;(IPC1-7):G01N21/956 主分类号 G01N21/956
代理机构 代理人
主权项
地址