发明名称 Method of manufacturing stacked semiconductor device
摘要 Flux is supplied to the surface of each land by a flux supplying apparatus. A solder ball having a predetermined size is supplied onto a land by using a ball supplying apparatus. A memory IC is disposed on a logic IC and each of a plurality of external leads comes into contact with a predetermined position in each of a plurality of corresponding lands. By performing predetermined heat treatment, the solder ball is melted to bond each external lead and each land with each other. After that, the melted solder is cooled down, the bonded portion is formed, and a stacked semiconductor device in which the memory IC is stacked on the logic IC is completed. In such a manner, a stacked semiconductor device in which external leads of a semiconductor device body are bonded to electrodes on a substrate securely is obtained.
申请公布号 US2004180471(A1) 申请公布日期 2004.09.16
申请号 US20030654900 申请日期 2003.09.05
申请人 RENESAS TECHNOLOGY CORP. 发明人 MATSUURA TETSUYA;HASHIMOTO TOMOAKI
分类号 H01L25/18;B23K1/00;H01L21/60;H01L21/98;H01L25/065;H01L25/07;H01L25/10;H05K1/18;H05K3/34;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 主分类号 H01L25/18
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