发明名称 Optical properties measurement method, exposure method, and device manufacturing method
摘要 A pattern arranged on an object is sequentially transferred onto a wafer arranged on an image plane side of a projection optical system so as to form a matrix shaped first area, which is made up of a plurality of divided areas, and in the periphery of the first area an overexposed second area is formed. And, a formed state of an image of the pattern in a plurality of divided areas is detected by an image processing method such as contrast detection. In this case, since the overexposed second area is located on the outer side of the first area, the borderline of the divided areas in the outermost section of the first area and the second area can be detected with a good S/N ratio, and the position of other divided areas can be calculated with substantial precision, with the borderline serving as datums. Accordingly, the formed state of the pattern image can be detected in a short period of time.
申请公布号 US2004179190(A1) 申请公布日期 2004.09.16
申请号 US20030702435 申请日期 2003.11.07
申请人 NIKON CORPORATION 发明人 MIYASHITA KAZUYUKI;MIKUCHI TAKASHI
分类号 G03F7/20;(IPC1-7):G01B9/00 主分类号 G03F7/20
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