发明名称 A METHOD OF FORMING AN OXIDE THIN FILMS USING NEGATIVE SPUTTER ION BEAM SOURCE
摘要 A method of forming an oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an oxygen gas and an insert gas into the process chamber, ionizing the oxygen gas and the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the oxide thin film on the substrate from the negatively charged ions reacted with the ionized oxygen gas.
申请公布号 WO2004049397(A3) 申请公布日期 2004.09.16
申请号 WO2003US36791 申请日期 2003.11.18
申请人 PLASMION CORPORATION 发明人 PAIK, NAMWOONG;SOHN, MINHO;KIM, STEVEN
分类号 C03C17/00;C03C17/245;C23C14/00;C23C14/08;C23C14/10;C23C14/34 主分类号 C03C17/00
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