发明名称 |
A METHOD OF FORMING AN OXIDE THIN FILMS USING NEGATIVE SPUTTER ION BEAM SOURCE |
摘要 |
A method of forming an oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an oxygen gas and an insert gas into the process chamber, ionizing the oxygen gas and the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the oxide thin film on the substrate from the negatively charged ions reacted with the ionized oxygen gas. |
申请公布号 |
WO2004049397(A3) |
申请公布日期 |
2004.09.16 |
申请号 |
WO2003US36791 |
申请日期 |
2003.11.18 |
申请人 |
PLASMION CORPORATION |
发明人 |
PAIK, NAMWOONG;SOHN, MINHO;KIM, STEVEN |
分类号 |
C03C17/00;C03C17/245;C23C14/00;C23C14/08;C23C14/10;C23C14/34 |
主分类号 |
C03C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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