发明名称 RESIST MATERIAL FOR LIQUID IMMERSION EXPOSURE PROCESS AND METHOD OF FORMING RESIST PATTERN WITH THE RESIST MATERIAL
摘要 <p>A negative resist material for liquid immersion exposure process, comprising a resin component and a crosslinking agent component for the resin component, wherein the solubility of the crosslinking agent component in liquid immersion medium is sparing; and a method of forming resist pattern therewith. Thus, in liquid immersion exposure processes, especially a liquid immersion exposure process wherein exposure is carried out while on a path along which lithography exposure light reaches a resist film at least on the resist film there is disposed a liquid of given thickness having a refractive index higher than that of air and lower than that of the resist film to thereby enhance the resolution of resist pattern, not only the degeneration of the resist film but also the degeneration of the disposed liquid during the liquid immersion exposure can be prevented, so that formation of high-resolution resist pattern by the liquid immersion exposure can be realized.</p>
申请公布号 WO2004079453(A1) 申请公布日期 2004.09.16
申请号 WO2004JP02752 申请日期 2004.03.04
申请人 TOKYO OHKA KOGYO CO., LTD.;IWASHITA, JYUN;HIRAYAMA, TAKU;TACHIKAWA, TOSHIKAZU 发明人 IWASHITA, JYUN;HIRAYAMA, TAKU;TACHIKAWA, TOSHIKAZU
分类号 H01L21/027;G03F7/004;G03F7/038;G03F7/20;(IPC1-7):G03F7/038;C08F20/04;C08F20/26 主分类号 H01L21/027
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