发明名称 METHOD OF FORMING THIN FILM, THIN FILM FORMING APPARATUS, PROGRAM AND COMPUTER-READABLE INFORMATION RECORDING MEDIUM
摘要 <p>A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).</p>
申请公布号 WO2004079042(A1) 申请公布日期 2004.09.16
申请号 WO2004JP02243 申请日期 2004.02.26
申请人 TOKYO ELECTRON LIMITED;OSHIMA, YASUHIRO;KOJIMA, YASUHIKO;SHIGEOKA, TAKASHI;KANNAN, HIROSHI;ISHIZAKA, TADAHIRO 发明人 OSHIMA, YASUHIRO;KOJIMA, YASUHIKO;SHIGEOKA, TAKASHI;KANNAN, HIROSHI;ISHIZAKA, TADAHIRO
分类号 C23C16/34;C23C16/44;C23C16/455;H01L21/205;H01L21/285;(IPC1-7):C23C16/455;H01L21/31 主分类号 C23C16/34
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