LASER ANNEALING OF COMPLEX METAL OXIDES (CMO) MEMORY MATERIALS FOR NON-VOLATILE MEMORY INTEGRATED CIRCUITS

摘要

A method is disclosed to effectively achieve a low deposition temperature of CMO memory materials by depositing the CMO memory material at relatively low temperatures that give an amorphous film, then to later melt and re-crystallize the CMO memory material with a laser (laser annealing).