| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a capacitor from being deteriorated in a semiconductor device including the capacitor. <P>SOLUTION: The semiconductor device comprises the capacitor Q formed above a first insulating film 11 to include a lower electrode, a dielectric film, and an upper electrode, a second insulating film 18 formed on the capacitor Q and the first insulating film 11 and having first stress, a recess 23 formed on the second insulating film 18, and an embedded layer 27 formed in the recess 23 and having second stress being either smaller than the first stress or opposite to the first stress. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
