发明名称 |
SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, ELECTRONIC EQUIPMENT, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the fusion of a bump electrode in the case of the secondary mounting of a carrier substrate. <P>SOLUTION: The bump electrode 17 having the melting point lower than the bump electrode 24 is formed on a land 12a mounted on the rear of the carrier substrate 11, and the bump electrode 17 is joined on the land 32 of a mother substrate 31 by conducting a reflow treatment at a temperature lower than the melting point of the bump electrode 24 and higher than the melting point of the bump electrode 17. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004259886(A) |
申请公布日期 |
2004.09.16 |
申请号 |
JP20030047929 |
申请日期 |
2003.02.25 |
申请人 |
SEIKO EPSON CORP |
发明人 |
AOYANAGI TETSUTOSHI |
分类号 |
H01L23/12;H01L21/60;H01L25/04;H01L25/065;H01L25/07;H01L25/16;H01L25/18;H01L31/072 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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