发明名称 SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, ELECTRONIC EQUIPMENT, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent the fusion of a bump electrode in the case of the secondary mounting of a carrier substrate. <P>SOLUTION: The bump electrode 17 having the melting point lower than the bump electrode 24 is formed on a land 12a mounted on the rear of the carrier substrate 11, and the bump electrode 17 is joined on the land 32 of a mother substrate 31 by conducting a reflow treatment at a temperature lower than the melting point of the bump electrode 24 and higher than the melting point of the bump electrode 17. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004259886(A) 申请公布日期 2004.09.16
申请号 JP20030047929 申请日期 2003.02.25
申请人 SEIKO EPSON CORP 发明人 AOYANAGI TETSUTOSHI
分类号 H01L23/12;H01L21/60;H01L25/04;H01L25/065;H01L25/07;H01L25/16;H01L25/18;H01L31/072 主分类号 H01L23/12
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