| 摘要 |
PROBLEM TO BE SOLVED: To prevent a next process from accepting harmful effect even if an insulating substrate 10 is left as it is for a long period of time after depositing polysilicon layers to form the active layers of a semiconductor device on the substrate 10 and forming it into a designated pattern. SOLUTION: In an etching process in which an active layer 1a of the semiconductor device is formed on by patterning a polysilicon layer after depositing the polysilicon layers on the insulating substrate 10, front surface of the substrate 10 exposed by removing the polysilicon layer is also slightly etched. COPYRIGHT: (C)2004,JPO&NCIPI |
