| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide chemical mechanical polishing slurry, which can polish/remove a tantalum metallic film for a barrier metallic film at sufficient polishing speed while inhibiting the excessive polishing of a copper metallic film for a buried wiring and can reduce the generation of a dishing. <P>SOLUTION: In the slurry for a chemical mechanical polishing, abrasive grains, ammonium nitrate as an oxidizing agent and 1,2,4-triazole as a polishing accelerator for the copper metallic film and water are contained, and pH is kept within a range of 3 to 4. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
