发明名称 DRAM
摘要 PROBLEM TO BE SOLVED: To reduce the electric power consumption of the power source circuit of a semiconductor memory, and more particularly, to reduce the standby current thereof. SOLUTION: A DRAM (dynamic RAM) is equipped with a plurality of memory banks which can be activated by respective activation commands and a plurality of power supply circuits which are disposed in corresponding to the respective memory banks, respectively receive external power supply voltages and output internal power supply voltages. The outputs of the power supply circuits are respectively connected to the corresponding memory banks and turn on the power source circuit component in correspondence to one of the memory banks among the power source circuits in response with the command for activating the memory bank and turn off the remaining power source circuits. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004259431(A) 申请公布日期 2004.09.16
申请号 JP20040112616 申请日期 2004.04.07
申请人 HITACHI LTD 发明人 HORIGUCHI SHINJI;NAKAMURA MASAYUKI;OKUMA YOSHIYUKI;KAJITANI KAZUHIKO;NAKAGOME YOSHINOBU
分类号 G11C11/407;G11C11/401;(IPC1-7):G11C11/407 主分类号 G11C11/407
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